(China (Mainland))
Product Summary
The TOSHIBA TLP521-1, -2 and -4 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode. The TLP521-2 offers two isolated channels in an eight lead plastic DIP package, while the TLP521-4 provides four isolated channels in a sixteen plastic DIP package.
Parametrics
TLP521-1 absolute maximum ratings: (1)Forward current IF: 70mA; (2)Forward current derating ΔIF /℃: -0.93 (Ta ≥ 50℃)mA /℃; (3)Pulse forward current IFP: 1 (100μ pulse, 100pps) A; (4)Reverse voltage VR: 5 V; (5)Junction temperature Tj: 125 ℃; (6)Collector.emitter voltage VCEO: 55 V; (7)Emitter.collector voltage VECO: 7 V; (8)Collector current IC: 50 mA; (9)Collector power dissipation(1 circuit) PC: 150mW; (10)Collector power dissipation: -1.5 to -1.0 mW /℃; (11)Junction temperature Tj: 125 ℃; (12)Storage temperature range Tstg: -55~125 ℃; (13)Operating temperature range Topr: -55~100 ℃; (14)Lead soldering temperature Tsol: 260 (10 s) ℃; (15)Total package power dissipation PT: 250mW; (16)Total package power dissipation derating (Ta ≥ 25℃): -2.5 to -1.5 mW /℃; (17)Isolation voltage BVS: 2500 (AC, 1min., R.H.≤ 60%) Vrms.
Features
TLP521-1 features: (1)Collector-emitter voltage: 55 V (min); (2)Current transfer ratio: 50% (min), Rank GB: 100% (min); (3)Isolation voltage: 2500 Vrms (min); (4)UL recognized, made in Japan: UL1577, file No. E67349; made in Thailand: UL1577, file No. E152349.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 TLP521-1 |
Other |
|
Data Sheet |
Negotiable |
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TLP521-1(Y,F,T) |
Toshiba |
Transistor Output Optocouplers PCOUPLER GaAs Ired x |
Data Sheet |
Negotiable |
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TLP521-1-4 |
Other |
|
Data Sheet |
Negotiable |
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TLP521-1GB |
Other |
|
Data Sheet |
Negotiable |
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