Product Summary

The TOSHIBA TLP521-1, -2 and -4 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode. The TLP521-2 offers two isolated channels in an eight lead plastic DIP package, while the TLP521-4 provides four isolated channels in a sixteen plastic DIP package.

Parametrics

TLP521-1 absolute maximum ratings: (1)Forward current IF: 70mA; (2)Forward current derating ΔIF /℃: -0.93 (Ta ≥ 50℃)mA /℃; (3)Pulse forward current IFP: 1 (100μ pulse, 100pps) A; (4)Reverse voltage VR: 5 V; (5)Junction temperature Tj: 125 ℃; (6)Collector.emitter voltage VCEO: 55 V; (7)Emitter.collector voltage VECO: 7 V; (8)Collector current IC: 50 mA; (9)Collector power dissipation(1 circuit) PC: 150mW; (10)Collector power dissipation: -1.5 to -1.0 mW /℃; (11)Junction temperature Tj: 125 ℃; (12)Storage temperature range Tstg: -55~125 ℃; (13)Operating temperature range Topr: -55~100 ℃; (14)Lead soldering temperature Tsol: 260 (10 s) ℃; (15)Total package power dissipation PT: 250mW; (16)Total package power dissipation derating (Ta ≥ 25℃): -2.5 to -1.5 mW /℃; (17)Isolation voltage BVS: 2500 (AC, 1min., R.H.≤ 60%) Vrms.

Features

TLP521-1 features: (1)Collector-emitter voltage: 55 V (min); (2)Current transfer ratio: 50% (min), Rank GB: 100% (min); (3)Isolation voltage: 2500 Vrms (min); (4)UL recognized, made in Japan: UL1577, file No. E67349; made in Thailand: UL1577, file No. E152349.

Diagrams

TLP521-1 Pin Configurations

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
TLP521-1
TLP521-1

Other


Data Sheet

Negotiable 
TLP521-1(Y,F,T)
TLP521-1(Y,F,T)

Toshiba

Transistor Output Optocouplers PCOUPLER GaAs Ired x

Data Sheet

Negotiable 
TLP521-1-4
TLP521-1-4

Other


Data Sheet

Negotiable 
TLP521-1GB
TLP521-1GB

Other


Data Sheet

Negotiable