Product Summary
The 2N3055 is a silicon Epitaxial-Base Planar NPN transistor mounted in Jedec TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. The complementary PNP type is MJ2955.
Parametrics
2N3055 absolute maximum ratings: (1)VCBO Collector-Base Voltage (IE = 0): 100 V; (2)VCER Collector-Emitter Voltage: 70 V; (3)VCEO Collector-Emitter Voltage (IB = 0): 60 V; (4)VEBO Emitter-Base Voltage (IC = 0): 7 V; (5)IC Collector Current: 15 A; (6)IB Base Current: 7 A; (7)Ptot Total Dissipation: 115 W; (8)Tstg Storage Temperature: -65 to 200 ℃; (9)Tj Max. Operating Junction Temperature: 200 ℃.
Features
2N3055 features: (1)STMicroelectronics preferred salestypes; (3)complementary npn-pnp devices.
Diagrams
Image | Part No | Mfg | Description | ![]() |
Pricing (USD) |
Quantity | ||||||||||||
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![]() 2N3055_MJ2955 |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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![]() 2N3055A |
![]() ON Semiconductor |
![]() Transistors Bipolar (BJT) 15A 60V 115W NPN |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() 2N3055AG |
![]() ON Semiconductor |
![]() Transistors Bipolar (BJT) 15A 60V 115W NPN |
![]() Data Sheet |
![]()
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![]() |
![]() 2N3055E |
![]() Other |
![]() |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() 2N3055G |
![]() ON Semiconductor |
![]() Transistors Bipolar (BJT) NPN 15A 60V |
![]() Data Sheet |
![]()
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![]() |
![]() 2N3055HG |
![]() ON Semiconductor |
![]() Transistors Bipolar (BJT) 15A 60V 115W NPN |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() 2N3055H |
![]() ON Semiconductor |
![]() Transistors Bipolar (BJT) 15A 60V 115W NPN |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() 2N3055 |
![]() STMicroelectronics |
![]() Transistors Bipolar (BJT) NPN Power Switching |
![]() Data Sheet |
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