Product Summary
The IRF7313 is a HEXFET power MOSFET. Fifth generation HEXFET IRF7313 from international rectifier utilizes advanced processing techniques to achieve ectremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET IRF7313 is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Parametrics
IRF7313 absolute maximum ratings: (1)Drain source voltage, VDS: 30V; (2)Gate source voltage, VGS: ±20V; (3)Continuous drain current, ID: TA=25℃, 6.5A; TA=70℃, 5.2A; (4)Pulsed drain current, IDM: 30A; (5)Power dissipation, PD: TA=25℃, 2.0W; TA=70℃, 1.3W; (6)Single pulse avalanche energy, EAS: 82mJ.
Features
IRF7313 features: (1)Generation V technology; (2)Ultra low on resistance; (3)Dual N channel MOSFET; (4)Surface mount; (5)Fully avalance rated; (6)Lead free.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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IRF7313 |
MOSFET 2N-CH 30V 6.5A 8-SOIC |
Data Sheet |
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IRF7313PBF |
International Rectifier |
MOSFET |
Data Sheet |
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IRF7313TRPBF |
International Rectifier |
MOSFET MOSFT DUAL NCh 30V 6.5A |
Data Sheet |
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IRF7313QPBF |
International Rectifier |
MOSFET |
Data Sheet |
Negotiable |
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IRF7313QTRPBF |
International Rectifier |
MOSFET |
Data Sheet |
Negotiable |
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IRF7313Q |
Other |
Data Sheet |
Negotiable |
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