DS1230Y-100+

256k Nonvolatile SRAM, DIP-28, 100NS, Unlimited write cycles, -0.3V to +7.0V

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Price:: US $1.00~10.00 / piece [Get Latest Price]

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PartNumber:: DS1230Y-100+

Brand:: Dallas Semiconductor - Maxim | Pack: DIP | D/C: 10+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
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Products Upload time: 2011-12-27

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Part Number:DS1230Y-100+
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Product Summary

The DS1230Y-100+ is a 256k Nonvolatile SRAM. It is organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. The DS1230Y-100+ can be used in place of existing 32k × 8 static RAMs directly conforming to the popular bytewide 28-pin DIP standard. The DIP devices also match the pinout of 28256 EEPROMs, allowing direct substitution while enhancing performance. The DS1230Y-100+ in the Low Profile Module package are specifically designed for surface-mount applications. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.

Parametrics

DS1230Y-100+ absolute maximum ratings: (1)Voltage on Any Pin Relative to Ground: -0.3V to +7.0V; (2)Operating Temperature: 0℃ to 70℃, -40℃ to +85℃ for Ind parts; (3)Storage Temperature: -40℃ to +70℃, -40℃ to +85℃ for Ind parts; (4)Soldering Temperature: 260℃ for 10 seconds.

Features

DS1230Y-100+ features: (1)10 years minimum data retention in the absence of external power; (2)Data is automatically protected during power loss; (3)Replaces 32k × 8 volatile static RAM, EEPROM or Flash memory; (4)Unlimited write cycles; (5)Low-power CMOS; (6)Read and write access times as fast as 70 ns; (7)Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time; (8)Full ±10% VCC operating range; (9)Optional industrial temperature range of -40℃ to +85℃, designated IND; (10)JEDEC standard 28-pin DIP package.