Product Summary
The F5E2 is an AlGaAs infrared emitting diode in a wide angle, TO-46 package.
Parametrics
F5E2 absolute maximum ratings: (1)Operating Temperature:-65 to +125 ℃; (2)Storage Temperature:-65 to +150 ℃; (3)Soldering Temperature:240 for 5 sec ℃; (4)Soldering Temperature:260 for 10 sec ℃; (5)Continuous Forward Current:100 mA; (6)Forward Current (pw, 10μs; 100Hz):3A; (7)Forward Current (pw, 1μs; 200Hz):10 A; (8)Reverse Voltage:3V; (9)Power Dissipation (TA = 25℃):170 mW; (10)Power Dissipation (TC = 25℃):1.3 W.
Features
F5E2 features: (1)Good optical to mechanical alignment; (2)Mechanically and wavelength matched to the TO-18 series phototransistor; (3)Hermetically sealed package; (4)High irradiance level.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||
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F5E2 |
Fairchild Semiconductor |
Infrared Emitters 9mW 1.7V IR LED |
Data Sheet |
Negotiable |
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F5E2_Q |
Fairchild Semiconductor |
Infrared Emitters 9mW 1.7V IR LED |
Data Sheet |
Negotiable |
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