(China (Mainland))
Product Summary
The N-Channel enhancement mode power field effect transistor FQP5N60C is produced using Fairchild proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FQP5N60C is well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Parametrics
FQP5N60C absolute maximum ratings: (1)VDSS Drain-Source Voltage: 600 V; (2)ID Drain Current - Continuous (TC = 25℃) 4.5 A; Continuous (TC = 100℃): 2.6 * A; (3)IDM Drain Current - Pulsed: 18 * A; (4)VGSS Gate-Source Voltage: ± 30 V; (5)EAS Single Pulsed Avalanche Energy: 210 mJ; (6)IAR Avalanche Current (Note 1): 4.5 A; (7)EAR Repetitive Avalanche Energy (Note 1): 10 mJ; (8)dv/dt Peak Diode Recovery dv/dt (Note 3): 4.5 V/ns; (9)PD Power Dissipation (TC = 25℃): 100 W; Derate above 25℃: 0.8 W/℃; (10)TJ, TSTG Operating and Storage Temperature Range: -55 to +150 ℃; (11)TL, Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds: 300 ℃.
Features
FQP5N60C features: (1)4.5A, 600V, RDS(on) = 2.5Ω @VGS = 10 V; (2)Low gate charge ( typical 15 nC); (3)Low Crss ( typical 6.5 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.
Diagrams
| Image | Part No | Mfg | Description |  |
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 FQP5N60C |
Fairchild Semiconductor |
MOSFET 600V N-Ch Q-FET advance C-Series |
Data Sheet |
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FQP5N60C_Q |
Fairchild Semiconductor |
MOSFET 600V N-Ch Q-FET advance C-Series |
Data Sheet |
Negotiable |
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